Abstract
CdSxSe1−x films were deposited for the first time by the brush plating technique from aqueous precursors. X-ray diffraction patterns of the films indicated polycrystalline structure with peaks corresponding to the hexagonal phase. Optical absorption measurements indicated the band gap to shift from 1.68 to 2.39 eV as the value of x is increased. XPS spectra indicated the peaks corresponding to Cd (3d5/2 and 3d3/2), Se (3d5/2 and 3d3/2) and S (3d5/2 and 3d3/2) levels. Surface morphology studies indicated the grain size to increase with increase of selenium concentration. The resistivity of the films changed from 20 ohm cm to 250 ohm cm as the sulphur content increased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
