Abstract

CaBi4Ti4O15 based thick films were prepared by screen-printing method on Si substrates. Screen-printable pastes were prepared by kneading the CaBi4Ti4O15 powder in a three-roll mill with an organic vehicle. The remanent polarization of 6.3 C/cm2 and coercive field of 130kV/cm were obtained for the CaBi4Ti4O15 with Nb2O5 1wt% thick film fired at 1130°C. The cavity structure was prepared by etching of Si substrate. The displacement-electric field butterfly curves were obtained.

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