Abstract
Thin films of boron nitride (BN) have been deposited on silicon and indium phosphide (InP) substrates at low temperature (≈ 300 °C) using a microwave plasma CVD system. The source material is molten borane-dimethylamine. The vapour was decomposed in a microwave nitrogen and argon plasma. The index of refraction and the thickness of the films have been determined by ellipsometry. FTIR spectroscopy was used for a fast phase identification. The composition was analyzed by X-ray photoelectron spectroscopy (XPS). The electrical properties of the films were evaluated by capacitance-voltage ( C-V) measurements of metal/BN/semiconductor (MIS) structures. From these results a minimum interface state density of 3.5 10 11 cm −2 eV −1 and a dielectric constant of 5.2 have been deduced.
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