Abstract
ABSTRACT Boron-doped a-Si:H thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at different temperatures from 450 °C to 1000 °C. The microstructures and electrical properties have been evaluated for the amorphous and nano-crystalline structures. It was found that thermal annealing can efficiently activate the dopant in films accompanying with formation of nc -Si grains. During th e transition process from amorphous to nano-crystalline structures, the room temperature dark conductivity is increased from 6.6×10 -4 S cm -1 to 2.8×10 2 S cm -1 . Based on the properties of p-type silicon films, th e P-N junction solar cells were prepared on n-type nc-Si substrate. It was shown that the conversion efficiency is increased monotonously as increasing the annealing temperature. Form the results, it can be implied that the solar cells with higher conversion efficiency can be obtained by using the method of thermal annealing. Keywords: boron, dopant, silicon film, solar cell, annealing, Raman, FTIR, conductivity, crystalline, PECVD
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