Preparation of boron carbon oxynitride phosphor film via laser chemical vapor deposition and annealing

Abstract

The present study demonstrates the synthesis of a boron carbon oxynitride (BCNO) phosphor film by laser annealing treatment of a boron carbonitride (BCN) film via laser chemical vapor deposition (CVD) using a single precursor source. A dense and uniform BCN film (B0.38C0.37N0.25) was prepared on a fused quartz substrate at a high deposition rate of 18.4 μm h−1 via laser CVD at a deposition temperature of 1373 K using only tetrakis(dimethylamino) diboron with argon (Ar) as a carrier gas. The surface of the BCN film was subsequently annealed in air at 1223 K by laser irradiation for 300 s to obtain a BCNO thin film. A disordered boron nitride (BN) layered structure, turbostratic BN, with a one-dimensional orientation was formed in the BCNO thin film. Upon excitation at 375 nm, the BCNO thin film exhibited photoluminescence with a broad emission band at 580 nm. The combination of CVD using a less-hazardous precursor and short-time annealing using a high-power laser enabled the preparation of a thin BCNO phosphor film.