Abstract
IIaIIIb 2VIb 4 ternary compound thin film doped with Ce 3+ ion is of interest for full color thin-film EL display, because it shows blue emission with good chromaticity. In this investigation, SrGa 2Se 4:Ce thin films were prepared by the multi-source deposition technique using Sr, Ga 2Se 3, Se and CeF 3 sources. Structural property and composition of the films deposited were characterized and the growth mechanism of the film was discussed. The SrGa 2Se 4 film could be successfully deposited without SrSe and GaSe phases at aGa 2/Se 3Sr flux ratio of 56 and at a substrate temperature of 450°C. It was shown that when Ga 2Se 3 evaporates from the source, it decomposes into GaSe and Se 2. It is suggested from these results that the formation of SrGa 2Se 4 or SrSe depends strongly on the substrate temperature.
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