Preparation of black phosphorus quantum dots and the surface decoration effect on the monolayer MoS2 photodetectors

Abstract

In this article, black phosphorus quantum dots (BP QDs) were prepared and spin-coated on the surface of monolayer MoS2 to fabricate hybrid BP QD/MoS2 photodetectors. The conductivity of the monolayer MoS2 was significantly improved by the decoration of BP QDs. The dark current at V = 4 V was increased by two orders of magnitude. Moreover, the hybrid structure of BP QD/MoS2 showed a maximum photodetection responsivity of 2.87 × 104A/W at a power density of 8 × 10−6μWcm−2. The photoelectronic response of BP QD/MoS2 structures may pave the way for applications in phototransistors and photodetectors.