Abstract
Forming electrodes on opposite sides of an individual bismuth nanowire was attempted to prepare for Hall measurements. Although a 1-mm-long bismuth nanowire which is completely covered with a quartz template has been successfully fabricated to prevent oxidation, it is very difficult to attach Hall electrodes on the opposite sides of the nanowire due to the quartz covering. One side of the cylindrical quartz template was removed by polishing without exposure of the nanowire to the atmosphere; the thickness between the polished template surface and the nanowire was estimated to be several micrometers. Focused ion beam processing was successfully employed to expose both surfaces of the nanowire under high vacuum by removing part of the quartz template. A carbon thin film was then deposited in situ on the wire surface to fabricate an electrical contact on the bismuth nanowire sample. Furthermore, the energy dispersive X-ray analysis was performed to the area processed by focused ion beam, and the bismuth component of the nanowire was successfully detected. It was confirmed that the focused ion beam processing was applicable to attach electrodes to bismuth nanowire for Hall measurement.
Highlights
Nanoscale structures such as superlattices and nanowires attract research interest due to their electrical transport properties
We have considered variations in the mobility of each carrier in the nanowire sample using a mean free path limitation model, direct measurement results have not yet been reported
A method to attach Hall electrodes on opposite sides of an individual bismuth nanowire encased in a quartz template was demonstrated using polishing, focused ion beam (FIB) processing, and carbon deposition
Summary
Nanoscale structures such as superlattices and nanowires attract research interest due to their electrical transport properties. It has been expected that nanostructured thermoelectric materials would exhibit enhanced performance [1,2,3,4,5]. Onedimensional bismuth nanowires have been expected to show an enhanced figure of merit as thermoelectric materials [2,3]. As a semimetal, has interesting electrical properties such as small effective mass, low carrier density, and a long mean free path; and the properties of bismuth, such as its Fermi surface and effective mass, have been well studied [6,7]. Bismuth nanowires have been fabricated using several methods for the study of the thermoelectric properties of one-dimensional systems [8,9,10,11,12,13]. Our group has fabricated a bismuth microwire array using a glass template and individual
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