Abstract
ABSTRACT BaTiO3 films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiO3 films were successfully prepared by co-evaporation of the BaTiO3 ceramic and Ti metal source. The films deposited at room temperature and 600°C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO3 films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of BaTiO3 films measured at 1 kHz were 150∼ 180 and 2∼ 5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15∼ 125°C.
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