Abstract
BaTiO 3 films were prepared on fused silica substrates by metal-organic chemical vapor deposition (MOCVD). Effect of deposition conditions on the composition, structure and morphology were studied. Thermodynamic calculations well predicted the relationship between deposition conditions and the phases of deposits. BaTiO 3 films in a single phase were obtained at 973 K and Ba/Ti ratio in the source gas of 0.25 to 0.35. The grain size of BaTiO 3 films increased with decreasing total pressure. BaTiO 3 film in thickness of about 1 μm had a relative dielectric constant of 480. The dielectric constant of the BaTiO 3 film showed the maximum value of 530 at 360 K.
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