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Abstract
In this work, we fabricated the antireflection microstructures (ARMs) on ZnSe surfaces using a femtosecond Bessel direct laser writing in burst mode. The morphology and transmittance performance of ARMs with different single-pulse energies (from 200 nJ to 500 nJ), different burst modes (burst 1, 3, and 5 modes), different periods (from 3 μm to 6 μm), and different arrangements were investigated. The results revealed that tetragonally arranged ARMs fabricated by 500 nJ of single-pulse energy, the burst 3 mode, and a period of 3 μm show the best transmittance performance. The average transmittance of the ARMs was about 17.13% higher than that of bulk ZnSe in the range of 8–12 μm, and the highest transmittance of 81.75% (an improvement of 18.63% on one side of the ZnSe) was achieved at 12.36 μm. This process makes it possible to enhance ARMs’ transmittance in the infrared wavelength range by using direct laser writing in burst mode.
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