Abstract
Amorphous hydrogenated carbon (a-C:H) films have been deposited by RF magnetron sputtering system in H2/He plasma. Hydrogen incorporated into the a-C:H film plays an important role in the release of internal stress in the film. On the other hand, hydrogen plasma has deoxidizing, etching and reduction effects on a substrate. Some oxides and compound semiconductors such as CdTe substrate receive serious damage during the deposition process of a-C:H film. Therefore, the amount of hydrogen radicals in sputtering plasma should be as small as possible for suppressing the damage. In this study, we investigate the effects of hydrogen incorporated to an a-C:H film which are deposited at a wide range of relative hydrogen gas flow rate (RH) from 0.1% to 50%. It has been clarified that the a-C:H films deposited in low RH have high quality and that the films can be grown on a CdTe substrate without etching by hydrogen ions and radicals at RH=0.2% and the nearest-neighbor region.
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