Abstract
AIN, ITO carbon films as a protective layer have been prepared by plasma-confining magnetron sputtering and Facing Targets Sputtering (FTS) methods. The nitride films reactively sputtered by magnetron sputtering, even if ionization was accelerated, proved to be insufficient in crystal orientation dispersion and the oxide films reactively sputtered even by plasma-free sputtering needed strict control in the reactive process. However, the FTS method can stably deposit single-element films with satisfactory properties. Carbon film deposited at argon gas pressure as low as 0.2 mTorr without plasma damage revealed a high tetrahedral coordination ratio and showed a textureless and flat surface.
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