Abstract
A planar magnetron sputtering system with facing two targets was presented and the discharge characteristics were examined for reactive sputtering of Al in N 2 gas atmosphere. It was found that the reactive sputtering is possible even at a low gas pressure such as 5 × 10 −4 Torr. At a substrate temperature of 250°C, all films obtained were c-axis oriented films where the c-axis is normal to the substrate surface. Even at a substrate temperature of T = 50° C, slightly degraded c-axis oriented films were obtained compared with those at 250°C.
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