Preparation of a Si( [formula omitted]):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si( [formula omitted

Abstract

A Ga–Se half-sheet van der Waals surface termination on Si(1 1 1) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally difficult to achieve a complete surface coverage by GaSe by this preparation procedure.