Preparation of a Photoluminescent Film on a Silicon-On-Insulator Device for the Simple, Rapid, and Quantitative Detection of a Hydatid Disease Diagnostic Protein Marker

Abstract

A silicon-on-insulator (SOI) device is an important integrated circuit technology containing an insulating material. In this paper, an SOI wafer consisting of n-type silicon grown on the surface of a SiO2 layer was adopted. Porous silicon on the SOI surface, prepared by an electrochemical etching method that connected the anode and cathode to the surface of the SOI wafer, displayed strong photoluminescence properties. A hydatid disease diagnostic protein was used as a target molecule to test the detection ability of the device. After immersing the film in different concentrations of the target protein, which resulted in the simple adsorption of the protein by the porous structure, the photoluminescence intensity of the film decreased after adsorption of the protein, and with an increasing protein concentration, the photoluminescence further decreased. This photoluminescence SOI-based porous silicon film provided the rapid quantitative detection of a protein and may be a promising silicon-based optoelectronic material.