Abstract
Preparation of (511)-oriented BaTi2O5 Thick Film on Pt/MgO(111) Substrate by Laser Chemical Vapor Deposition
Highlights
Ferroelectric materials have many applications as storage capacitors, micro-actuators, infrared sensors, and ferroelectric memory, where a lead-free ferroelectric material with a high Curie temperature (TC) is needed.(1–5) Akashi et al(6,7) synthesized a BaTi2O5 single crystal with a high TC (750 K) and a remnant polarization (Pr) of 1.92 × 10−2 C/m2 along the b-axis direction
These films exhibited ε′ of 67 and a dielectric loss of 0.015 at room temperature and a measurement frequency of 1 MHz.(13) BaTi2O5 films with different orientations were prepared on MgO(100), (110), and (111) single-crystal substrates by laser chemical vapor deposition (CVD), and it was found that the orientation of the films was seriously affected by the substrate and deposition temperature.(14) In this study, a BaTi2O5 film was prepared on a Pt-coated MgO(111) single-crystal substrate by laser CVD, and the crystal structure, microstructure, and dielectric properties of the BaTi2O5 film on the Pt/MgO(111) substrate were investigated
The XRD pattern was indexed to the monoclinic BaTi2O5 phase with the space group of C2 and lattice parameters of a = 1.6908(9) nm, b = 0.3937(1) nm, c = 0.9418(4) nm, and β = 103.12(5)o.(6) The (112), (−313), and (511) peaks of the monoclinic BaTi2O5 phase were observed, which indicated that a single-phase BaTi2O5 film was obtained within the detection limit of the XRD apparatus
Summary
Ferroelectric materials have many applications as storage capacitors, micro-actuators, infrared sensors, and ferroelectric memory, where a lead-free ferroelectric material with a high Curie temperature (TC) is needed.(1–5) Akashi et al(6,7) synthesized a BaTi2O5 single crystal with a high TC (750 K) and a remnant polarization (Pr) of 1.92 × 10−2 C/m2 along the b-axis direction. BaTi2O5 films have been prepared by many deposition methods, such as metal-organic chemical vapor deposition (MOCVD), pulsed laser deposition, the sol-gel method, and laser chemical vapor deposition (CVD). As the Ba/Ti molar ratio in the diglyme solution they used in the preparation was 0.65, they deposited a pure b-oriented BaTi2O5 film on a MgO(100) single-crystal substrate. Wang et al(10) prepared (020)-oriented BaTi2O5 thin films on MgO(100) single-crystal substrates by pulsed laser deposition. Ito et al(11) deposited (020)-oriented BaTi2O5 thick films on Pt/Ti/SiO2/Si substrates by laser CVD at a high deposition rate of about 90 μm/h. Randomly oriented BaTi2O5 thin films with ε′ of 55 were prepared on Pt/Ti/SiO2/Si substrates by the sol-gel method.(12) The (112)-oriented BaTi2O5 thick films were deposited on Pt/MgO(110) substrates by laser CVD. These films exhibited ε′ of 67 and a dielectric loss (tanδ) of 0.015 at room temperature and a measurement frequency of 1 MHz.(13) BaTi2O5 films with different orientations were prepared on MgO(100), (110), and (111) single-crystal substrates by laser CVD, and it was found that the orientation of the films was seriously affected by the substrate and deposition temperature.(14) In this study, a BaTi2O5 film was prepared on a Pt-coated MgO(111) single-crystal substrate by laser CVD, and the crystal structure, microstructure, and dielectric properties of the BaTi2O5 film on the Pt/MgO(111) substrate were investigated
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