Abstract
The homoepitaxial growth of thick β-Ga2O3 layers on 2-in.-diameter (001) wafers was demonstrated by halide vapor phase epitaxy. Growth rates of 3 to 4 µm/h were confirmed for growing intentionally Si-doped n-type layers. A homoepitaxial layer with an average thickness and carrier concentration of 10.9 µm and 2.7 × 1016 cm−3 showed standard deviations of 1.8 µm (16.5%) and 0.5 × 1016 cm−3 (19.7%), respectively. Ni Schottky barrier diodes fabricated directly on a 5.3-µm-thick homoepitaxial layer with a carrier concentration of 3.4 × 1016 cm−3 showed reasonable reverse and forward characteristics, i.e., breakdown voltages above 200 V and on-resistances of 3.8–7.7 mΩ cm2 at room temperature.
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