Abstract
Completely (001)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films up to ∼10 μm thick, deposited on (100) silicon wafers with Y-stabilized ZrO 2 (YSZ) as buffer and YBCO as electrode, are prepared by using pulsed laser deposition. The X-ray rocking curve scanning with respect to (001) reflection of 6.0-μm thick films exhibits the FWHM of only 0.6–0.7°. Small grain size and smooth surface of the as-prepared films were identified. The performance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations demonstrated quite good ferroelectric property. A piezoelectric coefficient d 31 ∼−300 pC/N, acceptable for piezoelectric applications, was measured.
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