Abstract
In order to fabricate a (Ga,Mn)As trilayer structure with tunneling magnetoresistance (TMR) effect on Si, GaAs buffer layers grown on Si (0 0 1) substrates were investigated as a function of growth sequence by employing relatively low-temperature (LT) processes less than 800 °C. The present results showed that both the thick film growth and the several intermittent annealing of initial LT-GaAs buffer layers were effective in improving the crystalline quality of GaAs films on Si substrates without high-temperature cleaning. The GaAs buffer layer was prepared on Si substrate using the optimized growth condition, and then a (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunneling junction structure was fabricated. TMR ratio was measured to be approximately 13% at a temperature of 5 K.
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