Abstract
Thin films in the aluminosilicate (AlSiO) system containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering in order to investigate the dependence of film formation and optical properties on substrate temperature and Si and Al contents. The obtained films were amorphous with smooth microstructure. The growth rate at different substrate temperatures ranged from 1.2 to 3.3 nm/min and increase with increasing the Si target power. The roughness decreases and thickness increases with increasing Si content. The thickness of the films grown at a deposition temperature of 100 °C is found to be higher than the films deposited at 300 and 500 °C. The AlSiO-coated glasses have a higher transmission in the visible region than the uncoated glass. The spectroscopic ellipsometry analysis reveals that the refractive index value decreased with decreasing the Al content, having extinction coefficient values of zero in the measured spectral region and band gap values ≥ 3.4 eV. The obtained thin films have over 90% transmittance in the visible range and no systematic variation of transmittance was observed with substrate temperature. The results suggest that glass substrate coated with AlSiO thin films have improved optical properties.
Highlights
Aluminosilicate is one of the most important materials systems in glass technology and geoscience, and of potential use as corrosion- and wear-resistant coatings due to their chemical stability and refractory character [1,2]
Most of the re ported thin films in AlSiO system are prepared by the sol-gel method are inhomogeneous as compared to the metal-organic chemical vapor deposition method, which offers the deposition of homogeneous thin films at low temperature with high growth rate [1,2]
Thin films prepared with low substrate temperature, i. e., 100 ◦C, have higher Si content than the thin films prepared with
Summary
Aluminosilicate is one of the most important materials systems in glass technology and geoscience, and of potential use as corrosion- and wear-resistant coatings due to their chemical stability and refractory character [1,2]. Thin films in the aluminosilicate systems have previously been pre pared by sol-gel, spin coating, chemical vapor deposition, and physical vapor deposition [5,6,7,8,9,10]. Most of the re ported thin films in AlSiO system are prepared by the sol-gel method are inhomogeneous as compared to the metal-organic chemical vapor deposition method, which offers the deposition of homogeneous thin films at low temperature with high growth rate [1,2]. Amorphous thin films in the M-Si-O-N systems (where M is alkaline earth) have been prepared by magnetron sputtering for modi fication and protection of the product surface [11,12,13]
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