Abstract
The amorphous partial crystallization method has been applied to fabricate Ge–Te based bulk in situ thermoelectric amorphous/nanocrystal composites. High-resolution transmission electron microscopy showed that nanocrystals of only 4–8 nm were formed by nanoscale phase separation from the semiconductor amorphous matrix during annealing between the glass transition and the crystallization temperatures. The electrical conductivity and the thermoelectric power factor of the amorphous/nanocrystal composite annealed at 443 K for 2 h were about three orders of magnitude larger than those of the amorphous precursor. The amorphous nanocomposite exhibited a lower thermal conductivity and a higher figure of merit, compared with the crystalline GeTe alloy. This work provides a new approach to develop new bulk nanocomposites for thermoelectric applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
