Abstract

Since the fabrication of micro-/nano-electronic devices is approaching nanoscales and demanding low energy, high dose ion beam processing with controlled area and dense patterns to meet the current semiconductor industry demands, continuous advancement is needed in terms of material design and ion beam techniques. In this perspective, development of new ion sources may provide advanced technologies useful in the manufacture of high-performance devices. Silver ion beams have salient features including simple generating process, nanoscale beam spot size and high intensity ion current. In this paper, we have developed a solid electrolyte multi emitter ion source (SEIS) with CsAg4Br3-xI2+x (x = 0.25) films deposited on silver tips. Ag+ ion emission is significantly enhanced with the added number of emitters and the ion current of 1.95 μA (with four emitter tips) has been obtained at 168 °C temperature and 20 kV accelerating voltage. The stability and cooling/heating curves of the multi-emitter ion beam are measured, and the interrelation between ion current intensity and mechanism of shape geometry of the emitter tips are discussed. Finally, both the solid electrolyte multi-tip emitters and the collector surfaces are analyzed, with an attempt to precisely control of formation of the nanoparticles (NPs) including their size and height through the control of the ion implantation parameters.

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