Abstract
Single crystal Mn thin films have been successfully grown on GaAs(001) substrates for the first time by molecular beam epitaxy. The bulk atomic structure of the manganese films is determined to be the face-centered-cubic metastable phase with the lattice parameter of 0.362 nm, by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD).
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
