Abstract
High purity single crystals of GeSb 2Te 3 were prepared. Values of the electrical conductivity, thermoelectric power, Hall constant, Nernst-Ettingshausen coefficient and of the IR reflectivity in the plasma oscillation region were obtained. Analysis of the results yielded the dielectric constant ( ϵ g = 39), index of refraction n λ→0 = 6.15, the character of scattering of the free carriers, the Fermi level (E F = 0.31 eV) the relaxation time of the free carriers (〈 τ〉= 0.86×10 −14s) and the value of N p m c . To interpret the results, three-valley model of the energy band was proposed and values of the Hall structure factor ( β = 0.67), the Hall scattering factor (M 1 = 0.7), the free-hole concentration (N p = 4.8 ×10 20 cm −3) and of the conductivity effective mass m∗ = 0.55 and m 1 = m 3 = 1.34 m 0, m 2 = 0.36 m 0 were calculated.
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