Abstract
The preparation of the intermetallic compounds Bi 2Te 3, Sb 2Te 3, and As 2Te 2 from purified elements by several techniques is discussed. Advantages and disadvantages of the various techniques are enumerated. Electrical and thermal properties are presented as functions of temperature and impurity concentration. The variation of carrier mobility with temperature is approximately T -5 2 for AS 2Te 3 and Bi 2Te 3. An anomalous variation of Hall coefficient with temperature is observed. The thermal conductivities of the three compounds are similar. It is suggested that the compounds are necessarily heavily doped semiconductors because Group-V atoms appear on tellurium lattice sites and tellurium atoms appear on Group-V atom lattice sites.
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