Preparation and resistive switching properties of ZrO2 films with large room-temperature ferromagnetism

Abstract

In this study, ordered porous ZrO2 films were prepared on porous Al2O3 films by magnetron sputtering. The films showed large room-temperature ferromagnetism, and it was also observed that the porous ZrO2 films have magnetic anisotropy. The magnetism in the direction perpendicular to the film surface was much greater than in the direction parallel to the film surface. A saturation magnetization value which was up to 3.19 × 10−4 emu was obtained for the ZrO2 film with pores of 42.55 nm in diameter when the external field was perpendicular to the film surface. The saturation magnetization strength per unit volume is 509.26 emu/cm3. After a photoluminescence (PL) spectrum and X-ray photoelectron spectroscopy (XPS) test on the film, it was found that oxygen vacancy content has a direct effect on the film’s magnetism. In addition, some Ag/ZrO2/PAA/Al devices were prepared, and the resistive switching properties of the ZrO2 films were tested. The research in this paper provides ideas for the development of spintronic devices.