Abstract
TiN thin films were deposited by D.C reactive magnetron sputtering on glass and metal substrate. The relations between the technical conditions and the properties of the thin films are studied, According to control the intensity of gas pressure by changing the flux of Ar and N2, the structure of TiN films could be control. By changing the target power、N2 flux and substrate temperature, the relations between the technical conditions and the structure of TiN thin films were analyzed so as to produce the TiN thin films of excellent decorations, good corrosion resistance and high micro-hardness.
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