Abstract
It is the purpose of this study to develop tough hinge material for the application of the torsional springs. Nitrogen-doped cobalt silicide (CoSi x N y ) film is sputtered from cobalt silicide (CoSi 2 ) target in Ar/N 2 discharge. Stress and sheet resistance of CoSi x N y film are two major properties to be evaluated. Taguchi method is practiced in reactive sputtering deposition of CoSi x N y film. Process pressure is most critical to the CoSi x N y film stress and the optimum condition of 1000 W, 0.8 Pa, and 20% N 2 flow ratio, indeed results in low tensile CoSi x N y film stress, about 54. MPa. Reannealing process indicates that stability of CoSi x N y film is attained after first annealing process. Stress hysteresis behaviors of CoSi x and CoSi x N y films resemble that of metal film with a complete elastic manner in the second stage of heating and cooling. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses suggest that toughness and strength of the film is achievable. It is concluded that CoSi x N y film as a hinge material is feasible.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
