Abstract
AbstractPoly[(N‐(4‐hydroxyphenyl)maleimide)‐alt‐(p‐trimethylsilyl‐α‐methylstyrene)] (α‐PHTMMS) and several N‐(4‐hydroxyphenyl)maleimide ‐alt‐p‐α‐methylstyrene related copolymers were synthesized for novel positive near‐UV resists containing diazonaphthoquinone sulfonate (DNS). The chain‐stiffening effect of the maleimide group was responsible for high thermal resistance. Thus, a high glass transition temperature of 240°C and thermal decomposition temperature of 425°C were obtained. Lithographic positive images were obtained which resisted thermal deformation at 250°C. The prepared silicon‐containing resists were also used as the top imaging layer of a bilayer resist for microlithographic application.
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