Abstract
The results os of a systematic study of the resistivity of some metal-silicon (with metals such as cobalt, chromium, molybdenum, nickel, titanium and tungsten and metal-insulator (with metals such as aluminum, chromium, nickel and titanium) films are reported as a function of the fraction of metal in the film composition. All the materials were made by the electron beam evaporation process, using either dual-electron-beam or reactive evaporation (for AlAl 2 O 3 and SnSnO 2 films). A variation of almost three orders of magnitude in resistivity was obtained by changing the composition of some of these films. The SnSnO 2 films, made by reactive evaporation, have an advantage in fabrication in not having a strong dependence of resistivity on composition, thereby relaxing the requirements on the control of oxygen pressure during deposition. Therefore, it is the preferred choice for resistive ribbon application.
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