Preparation and Properties of Poly(phenazasiline) with Various Substituents

Abstract

Poly(phenazasiline) (PPhenaz) with various substituents was prepared, and the substituent effect was discussed. PPhenaz was prepared by dehalogenative polycondensation of the corresponding dibromophenazasiline (Phenaz). The conductivity of an electrochemically doped PPhenaz film was 10-1–101 S cm-1. Using PPhenaz as a hole-transporting layer, a double layer electroluminescent (EL) device was fabricated. The properties of the EL device improved, when the substituent of PPhenaz was small. We also fabricated organic thin-film transistors (OTFTs) using PPhenaz films. The transistors showed p-type properties. The conductivity and the transistor properties were not dependent on the density of phenazasiline in PPhenaz, whereas the properties of PPhenaz-containing EL devices depended on the size of the substituent in PPhenaz.