Abstract
Pb(Zr, Ti)O 3 films were prepared on Ir/SiO 2/Si substrates at the substrate temperatures from 450°C to 600°C by a conventional rf diode sputtering system using a ZrTi+ xPbO composite target. X-ray diffraction analysis showed that the crystallinity of films deposited with a ZrTi+24% PbO target was better than that of films deposited with a ZrTi+30% PbO target. The dielectric properties of the PZT films deposited on an Ir/SiO 2/Si substrate at 600°C with a ZrTi+24% PbO target with Au top electrodes were evaluated before and after the annealing at 400°C 10 min in an O 2 atmosphere. The value of remanent polarization obtained from the P– E hysteresis loop characteristics improved from 4.2 μC/cm 2 before annealing to 16.2 μC/cm 2 after annealing at an electric field of 180 kV/cm. The Ti buffer layer improved the crystallinity and/or microstructure of the PZT and Ir films, as evaluated by X-ray diffraction analyses, and reduced the leakage current of the PZT thin films.
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