Abstract
Si2N2O/BN composites were successfully fabricated. With increasing BN content, the elastic modulus and hardness almost linearly decrease while the flexural strength does not exhibit a dramatic degradation. This is attributed to the fact that the homogeneously dispersed nanosized BN particles inhibit the grain growth of Si2N2O. The critical thermal‐shock resistance temperature of the Si2N2O/30 vol% BN composite is enhanced by 400°C than monolithic Si2N2O. The introduction of BN significantly improves the dielectric properties and machinability. The Si2N2O/BN composites show a combination of high strength, low dielectric constant, good thermal shock resistance, and machinability, indicating that they are promising structural/functional materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
