Abstract
Benzocyclobutene-modified silsesquioxane (BCB-POSS) and divinyl tetramethyl disiloxane-bisbenzocyclobutene (DVS-BCB) prepolymer were introduced into the containing benzocyclobutene (BCB) unit matrix resin P(4-MB-co-1-MP) polymerized from 1-methyl-1-(4-benzocyclobutenyl) silacyclobutane (4-MSCBBCB) and 1-methyl-1-phenylsilacyclobutane (1-MPSCB), respectively. The low dielectric constant (low-k) siloxane/carbosilane hybrid benzocyclobutene resin composites, P(4-MB-co-1-MP)/BCB-POSS and P(4-MB-co-1-MP)/DVS-BCB, were prepared. The curing processes of the composites were assessed via Fourier-transform infrared spectroscopy (FTIR) and differential scanning calorimetry (DSC). The effects on dielectric properties and heat resistance of those composites with different proportion of BCB-POSS and DVS-BCB were investigated using an impedance analyzer and thermogravimetric analyzer (TGA), respectively. The thermal curing of composites could be carried out by ring-opening polymerization (ROP) of the BCB four-member rings of BCB-POSS or DVS-BCB and those of P(4-MB-co-1-MP). With increasing the proportion of BCB-POSS to 30%, the 5% weight loss temperature (T5%) of P(4-MB-co-1-MP)/BCB-POSS composites was raised visibly, whereas the dielectric constant (k) was decreased owing to the introduction of nanopores into POSS. For P(4-MB-co-1-MP)/DVS-BCB composites, the T5% and k were slightly raised with increasing the proportion of DVS-BCB. The above results indicated that the BCB-POSS showed advantages over conventional fillers to simultaneously improve thermostability and decrease k.
Highlights
With the miniaturization and intelligent development of electronic devices, novel materials with high thermal stability and low-k are widely explored [1–4]
In order to meet the performance requirements of the generation of industrial semiconductors, BCB groups have been introduced into linear polymers as thermal cross-linking groups, which can significantly reduce the k of the cured resin and enhance the mechanical and thermal properties [11–18]
thermogravimetric analyzer (TGA) was used to evaluate the thermal stability of P(4-MB-co-1-MP), P(4-MB-co-1MP)/BCB-POSS, and P(4-MB-co-1-MP)/DVS-BCB composites with different proportions
Summary
With the miniaturization and intelligent development of electronic devices, novel materials with high thermal stability and low-k are widely explored [1–4]. DVS-BCB resin has been widely used in microelectronic fields including IC stress buffering/passivation layer, multi-layer wiring, high-frequency devices, and so on [11,30,31]. In this present report, the ROP of 4-MSCBBCB and 1-MPSCB was carried out. It is presented that the introduction of BCB-POSS can improve the thermal stability of the cured resins comparing with the matrix materials, which can effectively reduce the k of the composite materials. With the addition of DVS-BCB prepolymer, the k of the composites was slightly increased, and the thermal stability was improved distinctly Those siloxane/carbosilane hybrid benzocyclobutene resin composites could be potentially used in microelectronics and other fields
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