Abstract
Single crystals of lead telluride, , have been prepared and their resistivity and Hall coefficients determined. Both n‐ and p‐type lead telluride have been produced, but they were not of high resistivity. Charge carrier concentration in every case has been . Hall mobility of n‐ and p‐type carriers was found to be about 2240 and 860 cm2/volt‐sec, respectively.Material of p‐type was converted to n‐type by allowing lead to diffuse into the crystal at 500°C. The value of the diffusion coefficient of Pb in at this temperature is estimated to lie between .
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