Preparation and properties of InGaZn4O7 ceramic by cold sintering

Abstract

When the traditional method is used to prepare IGZO ceramic, it needs to be sintered under ultra-high temperatures and for a long time, and the preparation cost is high. To reduce the sintering temperature and energy consumption, a mixed-phase IGZO green compact with ultra-high density was first prepared using cold sintering process. Then, the IGZO ceramic with excellent properties was successfully prepared by the conventional sintering method at low sintering temperature. The effects of sintering temperature on the microstructure, density, and electrical properties of IGZO green compact and ceramic were studied. The densification process of ultrahigh density IGZO green compact was also discussed. The results show that the IGZO green compact with a relative density of over 96% can be obtained under cold sintering at 400 °C/475 MPa and assisted by the acetic acid solution. An IGZO ceramic with a relative density of 98.12% and resistivity of 4.87 × 10−3 Ω cm was obtained by sintering at 1100 °C for 5 h. This paper provides a reference for improving green compact density and preparing high-performance transparent oxide ceramics at low temperature.