Abstract
The opto-electronic properties of diffused InGaAsP p-n junction diodes have been investigated for the fabrication of well-controlled photovoltaic detector in the near-infrared spectral region. These diodes have been fabricated by Zn or Cd diffusion into n-type undoped InGaAsP LPE layers, and it has been found that Cd diffusion into InGaAsP is easier to control than Zn diffusion. The influence of residual impurities or vacancies in InGaAsP LPE layers can be seen in the current-voltage characteristics of the diffused p-n junction in both the current directions. Photoresponse of Cd-diffused diodes shows larger signals than Zn-diffused diodes in the higher energy side of the bandgap. The acceptor levels have been also measured by photoluminescence.
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