Abstract
Ga2O3 films were deposited on (100) oriented KTaO3 substrates by the metal-organic chemical vapor deposition technology. Structural and chemical composition analyses confirmed that the as-deposited film at 850 °C was β phase Ga2O3 with high crystalline quality. The epitaxial relationships between the film and substrate were determined as β-Ga2O3 (100) || KTaO3 (100) with β-Ga2O3 [001] || KTaO3 〈011〉 by X-ray diffraction, high resolution transmission electron microscopy and selected area electron diffraction results. The average transmittance in the visible range of the sample prepared at 850 °C was 73.6%, and the optical band gap of the β-Ga2O3 film was approximately 4.79 eV with a resistivity of 5.01 × 103 Ω·cm.
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