Abstract
IR-sensitive Pb-PbSe Schottky barriers have been realized on epitaxial PbSe/BaF 2/PbSe structures. Both the PbSe layers and the BaF 2 layer have been grown epitaxially by evaporation. The upper PbSe films revealed Hall mobilities as high as 10 5cm 2/Vs at 15 K and zero-bias resistance × area products of up to R 0 A = 12 Ωcm 2 at 77 K. They are thus of similar quality to epitaxial layers grown on bulk BaF 2.
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