Preparation and properties of AZO/PS/AZO tri-layer transparent conductive film with a light-trapping structure

Abstract

The light-trapping structure is an effective method to increase solar light capture efficiency in the solar cells. In this study, Al-doped ZnO (AZO)/polystyrene (PS)/AZO tri-layer transparent conductive film with light-trapping structure was fabricated by magnetron sputtering and liquid phase methods. The structural, optical and electrical properties of the AZO films could be controlled by different growth conditions. When the sputtering pressure of the under-layer AZO film was 0.2 Pa, the discharge voltage was around 80 V, which was within the optimal process window for obtaining AZO film with high crystallinity. The optimal under-layer AZO film had a large surface roughness and a very low static water contact angle of 75.71°, promoting the relatively uniform distribution of PS spheres. Under this sputtering condition, the prepared AZO/PS/AZO tri-layer film had the highest crystallinity and least point defects. The highest carrier concentration and Hall mobility are 3.0 × 1021 cm-3and 5.39 cm2 V-1 s-1, respectively. Additionally, a transparent conductive film with the lowest resistivity value (3.88 × 10-4 Ω cm) and the highest average haze value (26.5%) was obtained by optimizing the process parameters. These properties were comparable to or exceed the reported values of surface-textured SnO2-based as well as ZnO-based TCOs films, making our films suitable for transparent electrode applications, especially in thin-film solar cells.