Preparation and properties of a-Ge l− χN χ

Abstract

The study of the preparation and properties of Ge l− χ N χ alloys is reported. The samples were prepared by magnetron sputtering of poly Ge with a mixture of Ar and N 2, and the nitrogen content was changed by the gas ratio, r = [N 2]/([N 2] + [Ar]). The optical gap and nitrogen content increase appreciably above r ∼ 0.5 with increasing r. Raman scattering spectra show two characteristic peaks around 250 and 750cm −1 which are ascribed to the GeGe TO mode and to GeN mode, respectively. Electron spin resonance spectra suggest that two kinds of centers exist; one is a Ge dangling bond and the other is a nitrogen-related dangling bond. The electron spin resonance spin density of the Ge dangling bond gradually increases with increasing r, while the linewidth and g-shift decrease. These results are discussed in comparison with a-Si l− χ N χ .