Abstract
The growth of chalcopyrite Ag(AlxGa1-x)S2 crystals is demonstrated in the entire alloy composition range using the conventional iodine transport method. The composition of the grown crystals corresponds to that of starting materials. With increasing x, lattice constants decrease, following Vegard's law. The vibration modes for Raman scattering lines are assigned on the basis of the reported AgGaS2 data. The compositional dependence of the A1 mode spectrum is discussed in comparison with that for Cu–III–VI2 compounds. Two bands observed in photoluminescence excitation spectra for a dominantly deep emission at 77 K correspond to band-to-band transitions, which are related to the uppermost valence band and the lower two closed valence bands. The changes in photon energies of these photoluminescence excitation bands indicate an increase in the energy gap from 2.7 eV to approximately 3.6 eV with x. The spectral broadening of the A1 mode line and the two photoluminescence excitation bands around x=0.5 is considered to be due to the clustering effect.
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