Abstract
Abstract GaAs sawtooth doping superlattices consist of alternating n- and p-delta-doped layers separated by undoped regions. The space-charge-induced sawtooth-shaped periodic modulation of the band edges leads to a confinement of electrons and holes in alternate layers. The energy gap of the superlattice is smaller than that of the GaAs host material, and it remains stable even at high excitation densities due to the short carrier lifetime in the nanosecond range. This feature is in contrast to the tunable electronic properties of conventional doping superlattices. We have fabricated light emitting diodes and injection lasers from the new GaAs sawtooth superlattice which operate at room temperature in the 900 to 1000 nm range.
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