Abstract
Semiconducting chromium disilicide (CrSi 2) nanocrystals were prepared by the arc plasma method, and characterized by X-ray diffraction and transmission electron microscopy. The pressure-induced semiconductor-metal transition in CrSi 2 nanocrystals was investigated in a diamond anvil cell by electrical resistance measurements at high pressure. The pressure dependence of resistance at room temperature in the pressure range of 0–10 GPa revealed an exponential decrease up to 3.2 GPa, indicating a linear closing of the energy gap, followed by an almost pressure-independent metallic regime. This phase transition is discussed in terms of previous band structure calculations.
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