Preparation and photoluminescence of nanocrystalline Si-rich silicon oxide films by PECVD

Abstract

Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH 4), nitrous oxide (N 2O) and hydrogen (H 2) as gas source on quartz glass substrate at the substrate temperature of 300 °C. The effect of the ratio N 2O/SiH 4 on the oxidation, microstructures and photoluminescence (PL) of the as-deposited Si-rich silicon oxide films was investigated with FTIR, XRD and HRTEM. The results reveal that with the increasing ratio of N 2O/SiH 4, more amounts of oxygen are incorporated in the as-deposited films and more nanosized silicon particles are embedded in the films, forming nanocrystalline Si-rich silicon oxide films. The quantum confinement effect or the cooperation of quantum confinement and luminescence center results in the nanocrystalline Si-rich silicon oxide films of higher PL intensity.