Abstract
The g-C3N4/(110) facet BiVO4 heterojunction photocatalyst is fabricated by the photo-deposition method through loading g-C3N4 on the BiVO4(110) facet. After being excited by ultraviolet light, the holes migrate to the BiVO4(110) facet, making the BiVO4(110) facet positively charged. The electronegative g-C3N4 is adsorbed on the BiVO4(110) facet by electrostatic attraction, then, the g-C3N4/(110) facet BiVO4 heterojunction photocatalyst is formed. The built-in electric field formed by electrostatic force and the surface potential difference enhances the transfer of interface charges and the effective separation of photogenerated carriers. The stable photocurrent of the heterojunction photocatalyst is 3.1 times than that of BiVO4. More importantly, the degradation rate of heterojunction photocatalyst within 120 min under visible light irradiation is 3.5 times as high as that of BiVO4.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
