Abstract
At present, CuInSe2 (referred to as CIS) semiconductor has become one of the hot points in solar cell field at home and abroad for its excellent performances, such as direct bandgap, high light absorption coefficient, high photoelectric conversion efficiency and long-term stability. In this paper, the CIS bulk materials are prepared by the horizontal Bridgman method with double-heat sources, the crystal structure, microstructure morphology and composition of the samples are analyzed in X-ray diffraction instrument (XRD) and scanning electronic microscope (SEM) with Energy Dispersive X-ray Spectrum (EDX), and surface electrical state and electrical properties of the samples are characterized in X-ray photoelectron spectroscopy (XPS) and four point resistivity test system. The results show that the CIS crystal was grown, and that the conductive performance of the samples is good which display the characteristics of p-type semiconductor. Furthermore, a thin film CIS sample was obtained by argon ion-beam scanning bombardment, and it has high solar energy absorptivity and the bandgap of 0.99 eV analyzed in Ultraviolet-visible Spectrum that is suitable for solar cell. Keywords: Solar
Highlights
The solar energy has become the focus of new energy and renewable energy development because of its cleanness and security features
The CIS bulk materials are prepared by the horizontal Bridgman method with double-heat sources, the crystal structure, microstructure morphology and composition of the samples are analyzed in X-ray diffraction instrument (XRD) and scanning electronic microscope (SEM) with Energy Dispersive X-ray Spectrum (EDX), and surface electrical state and electrical properties of the samples are characterized in X-ray photoelectron spectroscopy (XPS) and four point resistivity test system
A thin film CIS sample was obtained by argon ion-beam scanning bombardment, and it has high solar energy absorptivity and the bandgap of 0.99 eV analyzed in Ultraviolet-visible Spectrum that is suitable for solar cell
Summary
The solar energy has become the focus of new energy and renewable energy development because of its cleanness and security features. Photovoltaic power generation materials applied in solar cells include the following: simple substance materials such as silicon, polysilicon, amorphous silicon, and compounds such as GaAs, CdS, CuInSe2 and so on [1,2]. Some organic materials [3,4] are low-cost, flexible, easy to be machined as solar cell, but the lifetime of organic cells is very short. The CIS is a direct bandgap semiconductor with chalcopyrite structure at room temperature, and has high absorption rate of sunlight and collection of minority carriers, and the CIS thin film has strong anti-radiation capacity, low cost, good thermal stability [5], so that it is regarded as the one of the most promising solar cell materials [6]. CIS materials used for high efficient solar cell are prepared with batch-growth and low-cost horizontal Bridgman method in this paper, and their microstructure and optoelectronic properties are analyzed [10] in order to provide actual and significant data for the preparation of the solar cells with high efficiency and low cost
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