Abstract
The Study analyzed and tested the absorption spectrum, photoluminescence spectrum, and device’s electroluminescence spectrum of a new silole material. The device with Silol as an emitting layer, emitted green-light whose structure is ITO/NPB/2,2,3,3-tetraphenyl-4,4-bisthienylsilole(TPBTSi)/Alq3/Mg: A by improvement of preparation technology and optimization of thin film. It reaches the maximum luminescence of 11290.2 cd/m2, the maximum luminous efficiency of 0.84 lm/W, luminescence spectrum of 516 nm, chromaticity diagram CIE coordinate of(0.275, 0.4568) when voltage is 15V. All of the above is the green characteristic spectrum of TPBTSi.
Highlights
IntroductionBy crystalizing while the device is working. The method to improve the Tg (the highest to 81 ̊C) is to increase the number of substituent aromatic, such as compounds 20c-e
The Study analyzed and tested the absorption spectrum, photoluminescence spectrum, and device’s electroluminescence spectrum of a new silole material
Luminescence mechanism is discussed in this study through four types of Silole complexes 2,2,3,3-tetraphenyl-4,4-bisthienylsilole(TPBTSi) being used as emitting layer, by choosing hole transport layer material NPB and electronic transport layer material Alq3 used as hole and electronic transports layers, preparing high brightness electroluminescence device with simple structure by vacuum thermal evaporation method, charactering device’s photoelectric properties and by the analysis of energy level structure
Summary
By crystalizing while the device is working. The method to improve the Tg (the highest to 81 ̊C) is to increase the number of substituent aromatic, such as compounds 20c-e. Since the Tg of 20ce is lower than Alq, the device prepared by 20d for ETM tested under air environment has a better stability. This is probably due to the fact that 20d has a better stability under air. Luminescence mechanism is discussed in this study through four types of Silole complexes 2,2,3,3-tetraphenyl-4,4-bisthienylsilole(TPBTSi) being used as emitting layer, by choosing hole transport layer material NPB and electronic transport layer material Alq used as hole and electronic transports layers, preparing high brightness electroluminescence device with simple structure by vacuum thermal evaporation method, charactering device’s photoelectric properties and by the analysis of energy level structure
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