Abstract
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.
Highlights
As a representative of the third generation of semiconductor, Gallium nitride (GaN) has a wide direct gap of 3.39 eV at room temperature, high luminescent efficiency and low temperature-quenching effect, promising application prospects in blue and UV lighting, Ultraviolet Detecting and other areas
The as-synthesized GaN samples were characterized by powder X-ray diffraction (XRD) using a Bruker D8 Advanced X-ray diffract-meter with Cu Kα radiation operating at 60 kV and 80 mA
GaN powders with hexagonal wurtzite structure are synthesized using a simple and economical method that gallium oxide is nitrided under flow of ammonia at quartz tube furnace
Summary
As a representative of the third generation of semiconductor, Gallium nitride (GaN) has a wide direct gap of 3.39 eV at room temperature, high luminescent efficiency and low temperature-quenching effect, promising application prospects in blue and UV lighting, Ultraviolet Detecting and other areas. Silicon chip and SiC are all the widely used substrates for the thin-film growth of GaN. The development of high-purity GaN crystalline for homoepitaxy by wafers is a trend in the future. The most popular methods to grow single-crystal bulk GaN demand high purity and single phase GaN powder as precursor source, one of current significance research topic is the synthesis GaN powder directly. We took an easy method to synthesize GaN powders, which is based on the reduction reaction of gallium oxides (Ga2O3) in ammonia gas
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